Intermodulation behaviour of a transient trapping model

Saif Zaman*, Anthony Parker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias.

Original languageEnglish
Title of host publicationProceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages29-32
Number of pages4
ISBN (Print)9843238141, 9789843238146
DOIs
Publication statusPublished - 2007
Event4th International Conference on Electrical and Computer Engineering, ICECE 2006 - Dhaka, Bangladesh
Duration: 19 Dec 200621 Dec 2006

Other

Other4th International Conference on Electrical and Computer Engineering, ICECE 2006
CountryBangladesh
CityDhaka
Period19/12/0621/12/06

Fingerprint Dive into the research topics of 'Intermodulation behaviour of a transient trapping model'. Together they form a unique fingerprint.

Cite this