Intermodulation behaviour of a transient trapping model

Saif Zaman; Anthony Parker

doi:10.1109/ICECE.2006.355282

Intermodulation behaviour of a transient trapping model

Saif Zaman^*, Anthony Parker

^*Corresponding author for this work

Faculty of Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias.

Original language	English
Title of host publication	Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	29-32
Number of pages	4
ISBN (Print)	9843238141, 9789843238146
DOIs	https://doi.org/10.1109/ICECE.2006.355282
Publication status	Published - 2007
Event	4th International Conference on Electrical and Computer Engineering, ICECE 2006 - Dhaka, Bangladesh Duration: 19 Dec 2006 → 21 Dec 2006

Other

Other	4th International Conference on Electrical and Computer Engineering, ICECE 2006
Country/Territory	Bangladesh
City	Dhaka
Period	19/12/06 → 21/12/06

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10.1109/ICECE.2006.355282

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@inproceedings{e57ee331dfb34803ac09653813e5faeb,

title = "Intermodulation behaviour of a transient trapping model",

abstract = "Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias.",

author = "Saif Zaman and Anthony Parker",

year = "2007",

doi = "10.1109/ICECE.2006.355282",

language = "English",

isbn = "9843238141",

pages = "29--32",

booktitle = "Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "4th International Conference on Electrical and Computer Engineering, ICECE 2006 ; Conference date: 19-12-2006 Through 21-12-2006",

}

Zaman, S & Parker, A 2007, Intermodulation behaviour of a transient trapping model. in Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006., 4178400, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 29-32, 4th International Conference on Electrical and Computer Engineering, ICECE 2006, Dhaka, Bangladesh, 19/12/06. https://doi.org/10.1109/ICECE.2006.355282

Intermodulation behaviour of a transient trapping model. / Zaman, Saif; Parker, Anthony.
Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2007. p. 29-32 4178400.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Intermodulation behaviour of a transient trapping model

AU - Zaman, Saif

AU - Parker, Anthony

PY - 2007

Y1 - 2007

N2 - Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias.

AB - Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias.

UR - https://www.scopus.com/pages/publications/46249105329

U2 - 10.1109/ICECE.2006.355282

DO - 10.1109/ICECE.2006.355282

M3 - Conference proceeding contribution

SN - 9843238141

SN - 9789843238146

SP - 29

EP - 32

BT - Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 4th International Conference on Electrical and Computer Engineering, ICECE 2006

Y2 - 19 December 2006 through 21 December 2006

ER -

Intermodulation behaviour of a transient trapping model

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