Intermodulation distortion simulation with a new MOSFET model

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    Abstract

    The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.

    Original languageEnglish
    Title of host publication2000 30th European Microwave Conference, EuMC 2000
    EditorsChristian Rumelhard
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages1-4
    Number of pages4
    DOIs
    Publication statusPublished - 2000
    Event2000 30th European Microwave Conference, EuMC 2000 - Paris, France
    Duration: 2 Oct 20005 Oct 2000

    Other

    Other2000 30th European Microwave Conference, EuMC 2000
    CountryFrance
    CityParis
    Period2/10/005/10/00

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