Intermodulation distortion simulation with a new MOSFET model

Anthony E. Parker; Guoli Qu

doi:10.1109/EUMA.2000.338582

Intermodulation distortion simulation with a new MOSFET model

Anthony E. Parker, Guoli Qu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.

Original language	English
Title of host publication	2000 30th European Microwave Conference, EuMC 2000
Editors	Christian Rumelhard
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/EUMA.2000.338582
Publication status	Published - 2000
Event	2000 30th European Microwave Conference, EuMC 2000 - Paris, France Duration: 2 Oct 2000 → 5 Oct 2000

Other

Other	2000 30th European Microwave Conference, EuMC 2000
Country/Territory	France
City	Paris
Period	2/10/00 → 5/10/00

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10.1109/EUMA.2000.338582

Cite this

@inproceedings{cec229e39c964e32a4fbb07efca1fea5,

title = "Intermodulation distortion simulation with a new MOSFET model",

abstract = "The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.",

author = "Parker, \{Anthony E.\} and Guoli Qu",

year = "2000",

doi = "10.1109/EUMA.2000.338582",

language = "English",

pages = "1--4",

editor = "Christian Rumelhard",

booktitle = "2000 30th European Microwave Conference, EuMC 2000",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2000 30th European Microwave Conference, EuMC 2000 ; Conference date: 02-10-2000 Through 05-10-2000",

}

Parker, AE & Qu, G 2000, Intermodulation distortion simulation with a new MOSFET model. in C Rumelhard (ed.), 2000 30th European Microwave Conference, EuMC 2000., 4139917, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2000 30th European Microwave Conference, EuMC 2000, Paris, France, 2/10/00. https://doi.org/10.1109/EUMA.2000.338582

Intermodulation distortion simulation with a new MOSFET model. / Parker, Anthony E.; Qu, Guoli.
2000 30th European Microwave Conference, EuMC 2000. ed. / Christian Rumelhard. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 1-4 4139917.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Intermodulation distortion simulation with a new MOSFET model

AU - Parker, Anthony E.

AU - Qu, Guoli

PY - 2000

Y1 - 2000

N2 - The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.

AB - The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.

UR - https://www.scopus.com/pages/publications/84897537403

U2 - 10.1109/EUMA.2000.338582

DO - 10.1109/EUMA.2000.338582

M3 - Conference proceeding contribution

AN - SCOPUS:84897537403

SP - 1

EP - 4

BT - 2000 30th European Microwave Conference, EuMC 2000

A2 - Rumelhard, Christian

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2000 30th European Microwave Conference, EuMC 2000

Y2 - 2 October 2000 through 5 October 2000

ER -

Intermodulation distortion simulation with a new MOSFET model

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