Intermodulation nulling in GaAs MESFETs

A. E. Parker*, J. B. Scott

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The output conductance of gallium arsenide MESFETs, traditionally considered detrimental to device performance, is exploited to effect the cancellation of distortion. This occurs in a common-source amplifier with correct loading and provides useful gain. A technique for characterizing the device is presented to allow calculation of optimum load for minimum distortion.

Original languageEnglish
Pages (from-to)1961-1962
Number of pages2
JournalElectronics Letters
Volume29
Issue number22
Publication statusPublished - 1 Jan 1993

Keywords

  • gallium arsenid
  • inrermodulalion
  • MESFETs

Fingerprint Dive into the research topics of 'Intermodulation nulling in GaAs MESFETs'. Together they form a unique fingerprint.

  • Cite this

    Parker, A. E., & Scott, J. B. (1993). Intermodulation nulling in GaAs MESFETs. Electronics Letters, 29(22), 1961-1962.