Abstract
The output conductance of gallium arsenide MESFETs, traditionally considered detrimental to device performance, is exploited to effect the cancellation of distortion. This occurs in a common-source amplifier with correct loading and provides useful gain. A technique for characterizing the device is presented to allow calculation of optimum load for minimum distortion.
| Original language | English |
|---|---|
| Pages (from-to) | 1961-1962 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 29 |
| Issue number | 22 |
| Publication status | Published - 1 Jan 1993 |
Keywords
- gallium arsenid
- inrermodulalion
- MESFETs