Intermodulation nulling in GaAs MESFETs

A. E. Parker*, J. B. Scott

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)


The output conductance of gallium arsenide MESFETs, traditionally considered detrimental to device performance, is exploited to effect the cancellation of distortion. This occurs in a common-source amplifier with correct loading and provides useful gain. A technique for characterizing the device is presented to allow calculation of optimum load for minimum distortion.

Original languageEnglish
Pages (from-to)1961-1962
Number of pages2
JournalElectronics Letters
Issue number22
Publication statusPublished - 1 Jan 1993


  • gallium arsenid
  • inrermodulalion

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    Parker, A. E., & Scott, J. B. (1993). Intermodulation nulling in GaAs MESFETs. Electronics Letters, 29(22), 1961-1962.