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Intrinsic dependence of intermodulation distortion in HEMTs

Guoli Qu*, Anthony E. Parker, Guangchun Zhang

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    This paper analyses the intrinsic (the Taylor series coefficients) dependence of intermodulation distortion in HEMT (High Electron Mobility Transistors) amplifiers. This analysis is very helpful for understanding the bias dependence of IM distortion since it critically depends on the bias dependence of Taylor series coefficients.

    Original languageEnglish
    Title of host publicationAPMC 2005: Asia-Pacific Microwave Conference Proceedings 2005
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages1-4
    Number of pages4
    Volume5
    ISBN (Print)078039433X, 9780780394339
    DOIs
    Publication statusPublished - 2005
    EventAPMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
    Duration: 4 Dec 20057 Dec 2005

    Other

    OtherAPMC 2005: Asia-Pacific Microwave Conference 2005
    Country/TerritoryChina
    CitySuzhou
    Period4/12/057/12/05

    Keywords

    • HEMTs
    • intermodulation distortion
    • microwave transistors

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