Inverted bulk-heterojunction organic photovoltaic device using a solution-derived ZnO underlayer

M. S. White*, D. C. Olson, S. E. Shaheen, N. Kopidakis, D. S. Ginley

*Corresponding author for this work

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712 Citations (Scopus)

Abstract

Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

Original languageEnglish
Article number143517
Pages (from-to)143517-1-143517-3
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
Publication statusPublished - 2006
Externally publishedYes

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    White, M. S., Olson, D. C., Shaheen, S. E., Kopidakis, N., & Ginley, D. S. (2006). Inverted bulk-heterojunction organic photovoltaic device using a solution-derived ZnO underlayer. Applied Physics Letters, 89(14), 143517-1-143517-3. [143517]. https://doi.org/10.1063/1.2359579