Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells

Ziyun Lin; Ivan Perez-Wurfl; Lingfeng Wu; Xuguang Jia; Tian Zhang; Binesh Puthen-Veettil; Haixiang Zhang; Dawei Di; Gavin Conibeer

doi:10.1117/12.2003504

Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells

Ziyun Lin, Ivan Perez-Wurfl, Lingfeng Wu, Xuguang Jia, Tian Zhang, Binesh Puthen-Veettil, Haixiang Zhang, Dawei Di, Gavin Conibeer

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

A vertical structure with a back contact layer is suggested for silicon quantum dots (Si QDs) solar cells to overcome the current crowding effect arising from the high lateral resistance in the emitter layer of the existing mesa-structured Si QDs solar cells on quartz substrates. Molybdenum (Mo) is widely used as the back contact layer in CIGS solar cells due to its high electrical conductivity, good optical reflectance and chemical stability. This paper will focus on the feasibility of Mo as a back contact layer deposited between a quartz substrate and a sputtered silicon rich oxide (SRO) bilayers structure to obtain a fully vertical Si QDs solar cell. In this structure, the desired previously mentioned electrical and optical properties of the Mo thin film have to be maintained during and after a high temperature annealing process. This high temperature process is unavoidable in this structure as it is required to form the Si QDs. This paper aims to study factors that have impacts on critical properties of the Mo thin films processed in contact with Si and SiO₂ at high temperatures. Characterizations including film thickness, microstructure, sheet resistance and optical reflectance measurements are also performed. Furthermore, interfacial properties between the Mo layer and the upper SRO bilayers are investigated.

Original language	English
Title of host publication	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Editors	Alexandre Freundlich, Jean-Francois Guillemoles
Place of Publication	Bellingham, WA
Publisher	SPIE
Pages	1-7
Number of pages	7
ISBN (Print)	9780819493897
DOIs	https://doi.org/10.1117/12.2003504
Publication status	Published - 2013
Externally published	Yes
Event	2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States Duration: 3 Feb 2013 → 7 Feb 2013

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	8620
ISSN (Print)	0277-786X

Conference

Conference	2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Country/Territory	United States
City	San Francisco, CA
Period	3/02/13 → 7/02/13

Keywords

Green photonics
Si QDs solar cells
Molybdenum
Back contact layer

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10.1117/12.2003504

Cite this

Lin, Z., Perez-Wurfl, I., Wu, L., Jia, X., Zhang, T., Puthen-Veettil, B., Zhang, H., Di, D., & Conibeer, G. (2013). Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells. In A. Freundlich, & J.-F. Guillemoles (Eds.), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II (pp. 1-7). Article 86201W (Proceedings of SPIE; Vol. 8620). SPIE. https://doi.org/10.1117/12.2003504

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title = "Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells",

abstract = "A vertical structure with a back contact layer is suggested for silicon quantum dots (Si QDs) solar cells to overcome the current crowding effect arising from the high lateral resistance in the emitter layer of the existing mesa-structured Si QDs solar cells on quartz substrates. Molybdenum (Mo) is widely used as the back contact layer in CIGS solar cells due to its high electrical conductivity, good optical reflectance and chemical stability. This paper will focus on the feasibility of Mo as a back contact layer deposited between a quartz substrate and a sputtered silicon rich oxide (SRO) bilayers structure to obtain a fully vertical Si QDs solar cell. In this structure, the desired previously mentioned electrical and optical properties of the Mo thin film have to be maintained during and after a high temperature annealing process. This high temperature process is unavoidable in this structure as it is required to form the Si QDs. This paper aims to study factors that have impacts on critical properties of the Mo thin films processed in contact with Si and SiO2 at high temperatures. Characterizations including film thickness, microstructure, sheet resistance and optical reflectance measurements are also performed. Furthermore, interfacial properties between the Mo layer and the upper SRO bilayers are investigated.",

keywords = "Green photonics, Si QDs solar cells, Molybdenum, Back contact layer",

author = "Ziyun Lin and Ivan Perez-Wurfl and Lingfeng Wu and Xuguang Jia and Tian Zhang and Binesh Puthen-Veettil and Haixiang Zhang and Dawei Di and Gavin Conibeer",

year = "2013",

doi = "10.1117/12.2003504",

language = "English",

isbn = "9780819493897",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "1--7",

editor = "Alexandre Freundlich and Jean-Francois Guillemoles",

booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II",

address = "United States",

note = "2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices ; Conference date: 03-02-2013 Through 07-02-2013",

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Lin, Z, Perez-Wurfl, I, Wu, L, Jia, X, Zhang, T, Puthen-Veettil, B, Zhang, H, Di, D & Conibeer, G 2013, Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells. in A Freundlich & J-F Guillemoles (eds), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II., 86201W, Proceedings of SPIE, vol. 8620, SPIE, Bellingham, WA, pp. 1-7, 2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, San Francisco, CA, United States, 3/02/13. https://doi.org/10.1117/12.2003504

Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells. / Lin, Ziyun; Perez-Wurfl, Ivan; Wu, Lingfeng et al.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. ed. / Alexandre Freundlich; Jean-Francois Guillemoles. Bellingham, WA: SPIE, 2013. p. 1-7 86201W (Proceedings of SPIE; Vol. 8620).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells

AU - Lin, Ziyun

AU - Perez-Wurfl, Ivan

AU - Wu, Lingfeng

AU - Jia, Xuguang

AU - Zhang, Tian

AU - Puthen-Veettil, Binesh

AU - Zhang, Haixiang

AU - Di, Dawei

AU - Conibeer, Gavin

PY - 2013

Y1 - 2013

N2 - A vertical structure with a back contact layer is suggested for silicon quantum dots (Si QDs) solar cells to overcome the current crowding effect arising from the high lateral resistance in the emitter layer of the existing mesa-structured Si QDs solar cells on quartz substrates. Molybdenum (Mo) is widely used as the back contact layer in CIGS solar cells due to its high electrical conductivity, good optical reflectance and chemical stability. This paper will focus on the feasibility of Mo as a back contact layer deposited between a quartz substrate and a sputtered silicon rich oxide (SRO) bilayers structure to obtain a fully vertical Si QDs solar cell. In this structure, the desired previously mentioned electrical and optical properties of the Mo thin film have to be maintained during and after a high temperature annealing process. This high temperature process is unavoidable in this structure as it is required to form the Si QDs. This paper aims to study factors that have impacts on critical properties of the Mo thin films processed in contact with Si and SiO2 at high temperatures. Characterizations including film thickness, microstructure, sheet resistance and optical reflectance measurements are also performed. Furthermore, interfacial properties between the Mo layer and the upper SRO bilayers are investigated.

AB - A vertical structure with a back contact layer is suggested for silicon quantum dots (Si QDs) solar cells to overcome the current crowding effect arising from the high lateral resistance in the emitter layer of the existing mesa-structured Si QDs solar cells on quartz substrates. Molybdenum (Mo) is widely used as the back contact layer in CIGS solar cells due to its high electrical conductivity, good optical reflectance and chemical stability. This paper will focus on the feasibility of Mo as a back contact layer deposited between a quartz substrate and a sputtered silicon rich oxide (SRO) bilayers structure to obtain a fully vertical Si QDs solar cell. In this structure, the desired previously mentioned electrical and optical properties of the Mo thin film have to be maintained during and after a high temperature annealing process. This high temperature process is unavoidable in this structure as it is required to form the Si QDs. This paper aims to study factors that have impacts on critical properties of the Mo thin films processed in contact with Si and SiO2 at high temperatures. Characterizations including film thickness, microstructure, sheet resistance and optical reflectance measurements are also performed. Furthermore, interfacial properties between the Mo layer and the upper SRO bilayers are investigated.

KW - Green photonics

KW - Si QDs solar cells

KW - Molybdenum

KW - Back contact layer

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DO - 10.1117/12.2003504

M3 - Conference proceeding contribution

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SN - 9780819493897

T3 - Proceedings of SPIE

SP - 1

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BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II

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ER -

Lin Z, Perez-Wurfl I, Wu L, Jia X, Zhang T, Puthen-Veettil B et al. Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells. In Freundlich A, Guillemoles JF, editors, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. Bellingham, WA: SPIE. 2013. p. 1-7. 86201W. (Proceedings of SPIE). doi: 10.1117/12.2003504

Investigation in feasibility of Molybdenum as a back contact layer for Silicon based quantum dot solar cells

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