Investigation of the interaction between perovskite films with moisture via in situ electrical resistance measurement

Long Hu, Gang Shao, Tao Jiang, Dengbing Li, Xinlin Lv, Hongya Wang, Xinsheng Liu, Haisheng Song, Jiang Tang*, Huan Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)


Organometal halide perovskites have recently emerged as outstanding semiconductors for solid-state optoelectronic devices. Their sensitivity to moisture is one of the biggest barriers to commercialization. In order to identify the effect of moisture in the degradation process, here we combined the in situ electrical resistance measurement with time-resolved X-ray diffraction analysis to investigate the interaction of CH3NH3PbI3-xClx perovskite films with moisture. Upon short-time exposure, the resistance of the perovskite films decreased and it could be fully recovered, which were ascribed to a mere chemisorption of water molecules, followed by the reversible hydration into CH3NH3PbI3-xClx·H2O. Upon long-time exposure, however, the resistance became irreversible due to the decomposition into PbI2. The results demonstrated the formation of monohydrated intermediate phase when the perovskites interacted with moisture. The role of moisture in accelerating the thermal degradation at 85 °C was also demonstrated. Furthermore, our study suggested that the perovskite films with fewer defects may be more inherently resistant to moisture.

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Original languageEnglish
Pages (from-to)25113-25120
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number45
Early online date26 Oct 2015
Publication statusPublished - 18 Nov 2015
Externally publishedYes


  • perovskite films
  • moisture
  • hydration
  • degradation
  • electrical resistance


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