Investigation on FET switch integration techniques for a tunable microwave periodic structure

L. Matekovits*, D. N. P. Thalakotuna, M. Heimlich, K. P. Esselle

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)
1 Downloads (Pure)

Abstract

A recently proposed tunable microwave periodic structure requires many switches to dynamically change its microwave propagation and radiation characteristics. The performance of a discrete Field Effect Transistor (FET) switch package, suitable for the structure, is investigated in two potential configurations. In one configuration, the switch is co-planar with the ground plane and in the other it is on a different surface. Measurements made on two test boards confirm that when the switches are turned "on" the switch insertion losses are not significantly different between the two configurations. However when the switches are turned "off", locating the switches on the ground plane provide better isolation between RF ports.

Original languageEnglish
Title of host publication2012 IEEE International Workshop on Antenna Technology, iWAT 2012
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages44-47
Number of pages4
ISBN (Print)9781467300360
DOIs
Publication statusPublished - 2012
Event2012 IEEE International Workshop on Antenna Technology, iWAT 2012 - Tuscon, AZ, United States
Duration: 5 Mar 20127 Mar 2012

Other

Other2012 IEEE International Workshop on Antenna Technology, iWAT 2012
CountryUnited States
CityTuscon, AZ
Period5/03/127/03/12

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