Investigation on FET switch integration techniques for a tunable microwave periodic structure

L. Matekovits; D. N. P. Thalakotuna; M. Heimlich; K. P. Esselle

doi:10.1109/IWAT.2012.6178394

Investigation on FET switch integration techniques for a tunable microwave periodic structure

L. Matekovits^*, D. N. P. Thalakotuna, M. Heimlich, K. P. Esselle

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

1 Downloads (Pure)

Abstract

A recently proposed tunable microwave periodic structure requires many switches to dynamically change its microwave propagation and radiation characteristics. The performance of a discrete Field Effect Transistor (FET) switch package, suitable for the structure, is investigated in two potential configurations. In one configuration, the switch is co-planar with the ground plane and in the other it is on a different surface. Measurements made on two test boards confirm that when the switches are turned "on" the switch insertion losses are not significantly different between the two configurations. However when the switches are turned "off", locating the switches on the ground plane provide better isolation between RF ports.

Original language	English
Title of host publication	2012 IEEE International Workshop on Antenna Technology, iWAT 2012
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	44-47
Number of pages	4
ISBN (Print)	9781467300360
DOIs	https://doi.org/10.1109/IWAT.2012.6178394
Publication status	Published - 2012
Event	2012 IEEE International Workshop on Antenna Technology, iWAT 2012 - Tuscon, AZ, United States Duration: 5 Mar 2012 → 7 Mar 2012

Other

Other	2012 IEEE International Workshop on Antenna Technology, iWAT 2012
Country/Territory	United States
City	Tuscon, AZ
Period	5/03/12 → 7/03/12

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10.1109/IWAT.2012.6178394

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Matekovits, L., Thalakotuna, D. N. P., Heimlich, M., & Esselle, K. P. (2012). Investigation on FET switch integration techniques for a tunable microwave periodic structure. In 2012 IEEE International Workshop on Antenna Technology, iWAT 2012 (pp. 44-47). Article 6178394 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IWAT.2012.6178394

@inproceedings{6916018afc4b44b9807f2770f9c83459,

title = "Investigation on FET switch integration techniques for a tunable microwave periodic structure",

abstract = "A recently proposed tunable microwave periodic structure requires many switches to dynamically change its microwave propagation and radiation characteristics. The performance of a discrete Field Effect Transistor (FET) switch package, suitable for the structure, is investigated in two potential configurations. In one configuration, the switch is co-planar with the ground plane and in the other it is on a different surface. Measurements made on two test boards confirm that when the switches are turned {"}on{"} the switch insertion losses are not significantly different between the two configurations. However when the switches are turned {"}off{"}, locating the switches on the ground plane provide better isolation between RF ports.",

author = "L. Matekovits and Thalakotuna, \{D. N. P.\} and M. Heimlich and Esselle, \{K. P.\}",

year = "2012",

doi = "10.1109/IWAT.2012.6178394",

language = "English",

isbn = "9781467300360",

pages = "44--47",

booktitle = "2012 IEEE International Workshop on Antenna Technology, iWAT 2012",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 IEEE International Workshop on Antenna Technology, iWAT 2012 ; Conference date: 05-03-2012 Through 07-03-2012",

}

Matekovits, L, Thalakotuna, DNP, Heimlich, M & Esselle, KP 2012, Investigation on FET switch integration techniques for a tunable microwave periodic structure. in 2012 IEEE International Workshop on Antenna Technology, iWAT 2012., 6178394, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 44-47, 2012 IEEE International Workshop on Antenna Technology, iWAT 2012, Tuscon, AZ, United States, 5/03/12. https://doi.org/10.1109/IWAT.2012.6178394

Investigation on FET switch integration techniques for a tunable microwave periodic structure. / Matekovits, L.; Thalakotuna, D. N. P.; Heimlich, M. et al.
2012 IEEE International Workshop on Antenna Technology, iWAT 2012. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2012. p. 44-47 6178394.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Heimlich, M.

AU - Esselle, K. P.

PY - 2012

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N2 - A recently proposed tunable microwave periodic structure requires many switches to dynamically change its microwave propagation and radiation characteristics. The performance of a discrete Field Effect Transistor (FET) switch package, suitable for the structure, is investigated in two potential configurations. In one configuration, the switch is co-planar with the ground plane and in the other it is on a different surface. Measurements made on two test boards confirm that when the switches are turned "on" the switch insertion losses are not significantly different between the two configurations. However when the switches are turned "off", locating the switches on the ground plane provide better isolation between RF ports.

AB - A recently proposed tunable microwave periodic structure requires many switches to dynamically change its microwave propagation and radiation characteristics. The performance of a discrete Field Effect Transistor (FET) switch package, suitable for the structure, is investigated in two potential configurations. In one configuration, the switch is co-planar with the ground plane and in the other it is on a different surface. Measurements made on two test boards confirm that when the switches are turned "on" the switch insertion losses are not significantly different between the two configurations. However when the switches are turned "off", locating the switches on the ground plane provide better isolation between RF ports.

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U2 - 10.1109/IWAT.2012.6178394

DO - 10.1109/IWAT.2012.6178394

M3 - Conference proceeding contribution

AN - SCOPUS:84860702281

SN - 9781467300360

SP - 44

EP - 47

BT - 2012 IEEE International Workshop on Antenna Technology, iWAT 2012

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2012 IEEE International Workshop on Antenna Technology, iWAT 2012

Y2 - 5 March 2012 through 7 March 2012

ER -

Investigation on FET switch integration techniques for a tunable microwave periodic structure

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