TY - GEN
T1 - Investigation on the effects of phosphine doping in Si nanocrystal material
AU - Wu, Lingfeng
AU - Perez-Wurfl, Ivan
AU - Lin, Ziyun
AU - Jia, Xuguang
AU - Zhang, Tian
AU - Puthen-Veettil, Binesh
AU - Yang, Terry Chien-Jen
AU - Xia, Hongze
AU - Conibeer, Gavin
PY - 2014
Y1 - 2014
N2 - The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.
AB - The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.
UR - http://www.scopus.com/inward/record.url?scp=84912083742&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925009
DO - 10.1109/PVSC.2014.6925009
M3 - Conference proceeding contribution
AN - SCOPUS:84912083742
SP - 666
EP - 668
BT - 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -