TY - JOUR
T1 - Iso-trapping measurement technique for characterization of self-heating in a GaN HEMT
AU - Albahrani, Sayed Ali
AU - Parker, Anthony
AU - Heimlich, Michael
AU - Schwitter, Bryan
PY - 2017/1
Y1 - 2017/1
N2 - The temperature response of field-effect transistors (FETs) to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very slow time constant. This affects intermodulation at high frequencies. A major difficulty in characterizing the self-heating process in microwave FETs is to differentiate between the self-heating and charge-trapping rates. An iso-trapping measurement technique is proposed by which it becomes possible to characterize the self-heating process in an FET in isolation from the effect of the charge-trapping process in the FET. The results of iso-trapping measurements performed on a GaN high-electron-mobility transistor are presented, and used to successfully characterize the self-heating process.
AB - The temperature response of field-effect transistors (FETs) to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very slow time constant. This affects intermodulation at high frequencies. A major difficulty in characterizing the self-heating process in microwave FETs is to differentiate between the self-heating and charge-trapping rates. An iso-trapping measurement technique is proposed by which it becomes possible to characterize the self-heating process in an FET in isolation from the effect of the charge-trapping process in the FET. The results of iso-trapping measurements performed on a GaN high-electron-mobility transistor are presented, and used to successfully characterize the self-heating process.
UR - http://www.scopus.com/inward/record.url?scp=84999277839&partnerID=8YFLogxK
U2 - 10.1109/TED.2016.2628239
DO - 10.1109/TED.2016.2628239
M3 - Article
AN - SCOPUS:84999277839
SN - 0018-9383
VL - 64
SP - 102
EP - 108
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
ER -