K-band carbon nanotube FET operation

Hong Zhang*, Aaron A. Pesetski, James E. Baumgardner, James M. Murduck, John X. Przybysz, John D. Adam

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)


A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate using a single nanotube grown by CVD and a sputtered SixNy gate dielectric. Measurements of the mixing products produced by two closely spaced microwave input signals applied to the gate of the FET circumvented the problems associated with measuring high impedance RF devices in 50 Omega systems. The frequency-independent performance of a CNT FET, at frequencies as high as 23 GHz, was demonstrated for the first time. This observed operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications.

Original languageEnglish
Title of host publication2006 IEEE MTT-S International microwave symposium digest, Vols 1-5
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)9780780395411
Publication statusPublished - 2006
Externally publishedYes
EventIEEE MTT-S International Microwave Symposium - San Francisco, Canada
Duration: 11 Jun 200616 Jun 2006

Publication series

NameIEEE MTT-S International Microwave Symposium
ISSN (Print)0149-645X


ConferenceIEEE MTT-S International Microwave Symposium
CitySan Francisco


  • carbon nanotube
  • field effect transistor
  • microwave
  • mixer
  • measurement


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