@inproceedings{e7698827f91049a4a7ae7b956e3d6784,
title = "K-band carbon nanotube FET operation",
abstract = "A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate using a single nanotube grown by CVD and a sputtered SixNy gate dielectric. Measurements of the mixing products produced by two closely spaced microwave input signals applied to the gate of the FET circumvented the problems associated with measuring high impedance RF devices in 50 Omega systems. The frequency-independent performance of a CNT FET, at frequencies as high as 23 GHz, was demonstrated for the first time. This observed operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications.",
keywords = "carbon nanotube, field effect transistor, microwave, mixer, measurement",
author = "Hong Zhang and Pesetski, {Aaron A.} and Baumgardner, {James E.} and Murduck, {James M.} and Przybysz, {John X.} and Adam, {John D.}",
year = "2006",
language = "English",
isbn = "9780780395411",
series = "IEEE MTT-S International Microwave Symposium",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1688--+",
booktitle = "2006 IEEE MTT-S International microwave symposium digest, Vols 1-5",
address = "United States",
note = "IEEE MTT-S International Microwave Symposium ; Conference date: 11-06-2006 Through 16-06-2006",
}