Large resistive switching in ultrathin BiFeO3 thin films

Zhijun Ma; Zhiwei Wang; Qi Zhang; Yizhong Guo; Peng Zhou; Kun Liang; Tianjin Zhang; Nagarajan Valanoor

doi:10.1063/5.0231809

Large resistive switching in ultrathin BiFeO₃ thin films

Zhijun Ma, Zhiwei Wang, Qi Zhang^*, Yizhong Guo, Peng Zhou, Kun Liang^*, Tianjin Zhang^*, Nagarajan Valanoor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO₃ (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO₃ substrates by pulsed laser deposition and their resistive switching (RS) behaviors were investigated. A large resistive switching with ON/OFF ratio of ∼10⁶ is observed, surpassing the performance of most resistive random access memories ever reported. The conducting filament is proposed to dominate the RS behavior in the positive voltage region, while the modulation of ferroelectric polarization is suggested to play a significant role in the negative voltage region. Our study significantly deepens the understanding of the physical origin of RS and could provide a reference for designing high-performance memories and memristors based on ultrathin ferroelectric films.

Original language	English
Article number	154101
Pages (from-to)	1-7
Number of pages	7
Journal	Journal of Applied Physics
Volume	136
Issue number	15
DOIs	https://doi.org/10.1063/5.0231809
Publication status	Published - 21 Oct 2024
Externally published	Yes

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Copyright the Author(s) 2024. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

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title = "Large resistive switching in ultrathin BiFeO3 thin films",

abstract = "Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO3 (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO3 substrates by pulsed laser deposition and their resistive switching (RS) behaviors were investigated. A large resistive switching with ON/OFF ratio of ∼106 is observed, surpassing the performance of most resistive random access memories ever reported. The conducting filament is proposed to dominate the RS behavior in the positive voltage region, while the modulation of ferroelectric polarization is suggested to play a significant role in the negative voltage region. Our study significantly deepens the understanding of the physical origin of RS and could provide a reference for designing high-performance memories and memristors based on ultrathin ferroelectric films.",

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AU - Ma, Zhijun

AU - Wang, Zhiwei

AU - Zhang, Qi

AU - Guo, Yizhong

AU - Zhou, Peng

AU - Liang, Kun

AU - Zhang, Tianjin

AU - Valanoor, Nagarajan

N1 - Copyright the Author(s) 2024. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2024/10/21

Y1 - 2024/10/21

N2 - Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO3 (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO3 substrates by pulsed laser deposition and their resistive switching (RS) behaviors were investigated. A large resistive switching with ON/OFF ratio of ∼106 is observed, surpassing the performance of most resistive random access memories ever reported. The conducting filament is proposed to dominate the RS behavior in the positive voltage region, while the modulation of ferroelectric polarization is suggested to play a significant role in the negative voltage region. Our study significantly deepens the understanding of the physical origin of RS and could provide a reference for designing high-performance memories and memristors based on ultrathin ferroelectric films.

AB - Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO3 (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO3 substrates by pulsed laser deposition and their resistive switching (RS) behaviors were investigated. A large resistive switching with ON/OFF ratio of ∼106 is observed, surpassing the performance of most resistive random access memories ever reported. The conducting filament is proposed to dominate the RS behavior in the positive voltage region, while the modulation of ferroelectric polarization is suggested to play a significant role in the negative voltage region. Our study significantly deepens the understanding of the physical origin of RS and could provide a reference for designing high-performance memories and memristors based on ultrathin ferroelectric films.

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Large resistive switching in ultrathin BiFeO₃ thin films

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