TY - JOUR
T1 - Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs
AU - Zuo, H. Y.
AU - Paterson, Melissa J.
AU - Goldys, E.
AU - Tansley, T. L.
AU - Afifuddin, null
PY - 1999
Y1 - 1999
N2 - Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
AB - Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=0032646837&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032646837
SP - 199
EP - 201
JO - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
JF - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
ER -