Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

H. Y. Zuo*, Melissa J. Paterson, E. Goldys, T. L. Tansley, Afifuddin

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.

Original languageEnglish
Pages (from-to)199-201
Number of pages3
JournalConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Publication statusPublished - 1999

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