Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
|Number of pages||3|
|Journal||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|Publication status||Published - 1999|