Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

H. Y. Zuo; Melissa J. Paterson; E. Goldys; T. L. Tansley; Afifuddin

Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

H. Y. Zuo^*, Melissa J. Paterson, E. Goldys, T. L. Tansley, Afifuddin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm ²V ^-1s ^-1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.

Original language	English
Pages (from-to)	199-201
Number of pages	3
Journal	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Publication status	Published - 1999

Cite this

@article{2a48c199898a4964b7cb23830c2b9b04,

title = "Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs",

abstract = "Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.",

author = "Zuo, \{H. Y.\} and Paterson, \{Melissa J.\} and E. Goldys and Tansley, \{T. L.\} and Afifuddin",

year = "1999",

language = "English",

pages = "199--201",

journal = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

}

TY - JOUR

T1 - Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

AU - Zuo, H. Y.

AU - Paterson, Melissa J.

AU - Goldys, E.

AU - Tansley, T. L.

AU - Afifuddin, null

PY - 1999

Y1 - 1999

N2 - Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.

AB - Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600 °C. The hole mobilities obtained are up to 40 cm 2V -1s -1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.

UR - https://www.scopus.com/pages/publications/0032646837

M3 - Article

AN - SCOPUS:0032646837

SP - 199

EP - 201

JO - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

JF - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

ER -

Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Abstract

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