Lateral growth of Ge nanocrystals in a thin Ge-rich silicon nitride layer

Engineering

• Absorption Edge 50%
• Absorptivity 50%
• Annealing Furnace 50%
• Barrier Layer 50%
• Lateral Growth 100%
• Magnetron 50%
• Multilayer Film 50%
• Nitride 100%
• Nitride Layer 100%
• Peak Shift 50%
• Phase Separation 50%
• Phonon Confinement 50%
• Processing Condition 50%
• Quantum Confinement 50%
• Structural Stress 50%
• Tensile Stress σ 50%

Material Science

• Annealing 12%
• Composite Material 12%
• Film 25%
• Magnetron Sputtering 12%
• Multilayer Film 12%
• Silicon Nitride 100%
• Ultimate Tensile Strength 12%