A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is described and modelled. Device simulations indicate devices with maximum fT of 22 GHz with peak gain of 95 and fmax of 14 GHz can be obtained by the processes outlined. The simulation results highlight the feasibility of the design and further improvements and scaling of the device would allow the transistor to operate at even higher frequencies and lower power.
- confined lateral selective epitaxial growth
- heterojunction bipolar transistor
- SiGe HBT device simulation
- SiGe HBT process simulation