Light-induced degradation of "a-Si:H" - a comparison of short-laser-pulse and steady light degradation

P. Tzanetakis*, N. Kopidakis, M. Androulidaki, C. Kalpouzos, P. Stradins, H. Fritzsche

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

An undoped and a compensated a-Si:H sample have been degraded by 17-34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption α. For the same change in a α pulses degrade the photoconductivity σp more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σp and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.

Original languageEnglish
Pages (from-to)245-250
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume377
Publication statusPublished - 1995
Externally publishedYes

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