Light-induced degradation of "a-Si:H" - a comparison of short-laser-pulse and steady light degradation

P. Tzanetakis; N. Kopidakis; M. Androulidaki; C. Kalpouzos; P. Stradins; H. Fritzsche

Light-induced degradation of "a-Si:H" - a comparison of short-laser-pulse and steady light degradation

P. Tzanetakis^*, N. Kopidakis, M. Androulidaki, C. Kalpouzos, P. Stradins, H. Fritzsche

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An undoped and a compensated a-Si:H sample have been degraded by 17-34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption α. For the same change in a α pulses degrade the photoconductivity σ_p more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σ_p and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.

Original language	English
Pages (from-to)	245-250
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	377
Publication status	Published - 1995
Externally published	Yes

Cite this

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title = "Light-induced degradation of {"}a-Si:H{"} - a comparison of short-laser-pulse and steady light degradation",

abstract = "An undoped and a compensated a-Si:H sample have been degraded by 17-34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption α. For the same change in a α pulses degrade the photoconductivity σp more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σp and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.",

author = "P. Tzanetakis and N. Kopidakis and M. Androulidaki and C. Kalpouzos and P. Stradins and H. Fritzsche",

year = "1995",

language = "English",

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pages = "245--250",

journal = "Materials Research Society Symposium - Proceedings",

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T1 - Light-induced degradation of "a-Si:H" - a comparison of short-laser-pulse and steady light degradation

AU - Tzanetakis, P.

AU - Kopidakis, N.

AU - Androulidaki, M.

AU - Kalpouzos, C.

AU - Stradins, P.

AU - Fritzsche, H.

PY - 1995

Y1 - 1995

N2 - An undoped and a compensated a-Si:H sample have been degraded by 17-34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption α. For the same change in a α pulses degrade the photoconductivity σp more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σp and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.

AB - An undoped and a compensated a-Si:H sample have been degraded by 17-34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption α. For the same change in a α pulses degrade the photoconductivity σp more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σp and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.

UR - http://www.scopus.com/inward/record.url?scp=0029518585&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029518585

SN - 0272-9172

VL - 377

SP - 245

EP - 250

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Light-induced degradation of "a-Si:H" - a comparison of short-laser-pulse and steady light degradation

Abstract

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