TY - JOUR
T1 - Lithium compensation of GaAs
AU - Butcher, Kenneth Scott Alexander
AU - Alexiev, Dimitri
AU - Tansley, Trevor Lionel
PY - 1994
Y1 - 1994
N2 - Defects generated following Li diffusion into GaAs were studied by optical deep level transient conductance spectroscopy (ODLTCS) and deep level transient spectroscopy (DLTS). Both undoped semi-insulating liquid-encapsulated Czochralski and undoped n-type horizontal Bridgman samples were examined. The results for the horizontal Bridgman samples were reconciled with previous work on Li in GaAs by taking into account the effects of the sample annealing process.
AB - Defects generated following Li diffusion into GaAs were studied by optical deep level transient conductance spectroscopy (ODLTCS) and deep level transient spectroscopy (DLTS). Both undoped semi-insulating liquid-encapsulated Czochralski and undoped n-type horizontal Bridgman samples were examined. The results for the horizontal Bridgman samples were reconciled with previous work on Li in GaAs by taking into account the effects of the sample annealing process.
UR - http://www.scopus.com/inward/record.url?scp=0028449748&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90489-8
DO - 10.1016/0022-0248(94)90489-8
M3 - Article
AN - SCOPUS:0028449748
VL - 140
SP - 9
EP - 18
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -