Lithium compensation of GaAs

Kenneth Scott Alexander Butcher*, Dimitri Alexiev, Trevor Lionel Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Defects generated following Li diffusion into GaAs were studied by optical deep level transient conductance spectroscopy (ODLTCS) and deep level transient spectroscopy (DLTS). Both undoped semi-insulating liquid-encapsulated Czochralski and undoped n-type horizontal Bridgman samples were examined. The results for the horizontal Bridgman samples were reconciled with previous work on Li in GaAs by taking into account the effects of the sample annealing process.

Original languageEnglish
Pages (from-to)9-18
Number of pages10
JournalJournal of Crystal Growth
Volume140
Issue number1-2
DOIs
Publication statusPublished - 1994

Fingerprint Dive into the research topics of 'Lithium compensation of GaAs'. Together they form a unique fingerprint.

Cite this