LNA design based on an extracted single gate finger model

Simon J. Mahon; Anna Dadello; Peter Vun; Jabra Tarazi; Alan C. Young; Michael C. Heimlich; James T. Harvey; Anthony E. Parker

doi:10.1109/CSICS.2010.5619678

LNA design based on an extracted single gate finger model

Simon J. Mahon^*, Anna Dadello, Peter Vun, Jabra Tarazi, Alan C. Young, Michael C. Heimlich, James T. Harvey, Anthony E. Parker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

27 Citations (Scopus)

Abstract

A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic (EM) analysis. This allows techniques such as asymmetric inductive source feedback in an LNA to be modelled without prior fabrication of custom test structures. The 7-13 GHz, self-biased LNA has state-of-the-art noise figure (NF) of 1.25 dB at mid-band, gain of 20.5 ± 0.1 dB with 10 dB input and output matches, 10 dBm P1dB, 14 dBm Psat and 22 dBm OIP3. Excellent agreement is achieved with simulation. In a 3x3 QFN package the measured NF is 1.36 dB and the gain is 20 dB. The first-time design success achieved here validates the modelling and parameter extraction technique.

Original language	English
Title of host publication	2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Print)	9781424474387
DOIs	https://doi.org/10.1109/CSICS.2010.5619678
Publication status	Published - 2010
Event	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States Duration: 3 Oct 2010 → 6 Oct 2010

Publication series

Name	IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest
Publisher	IEEE
ISSN (Print)	1550-8781

Other

Other	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
Country/Territory	United States
City	Monterey, CA
Period	3/10/10 → 6/10/10

Access to Document

10.1109/CSICS.2010.5619678

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Mahon, S. J., Dadello, A., Vun, P., Tarazi, J., Young, A. C., Heimlich, M. C., Harvey, J. T., & Parker, A. E. (2010). LNA design based on an extracted single gate finger model. In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010 (pp. 1-4). [5619678] (IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CSICS.2010.5619678

Mahon, Simon J. ; Dadello, Anna ; Vun, Peter et al. / LNA design based on an extracted single gate finger model. 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2010. pp. 1-4 (IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest).

@inproceedings{3cb18b608f3d4d56be2fe7ef4c1b3a26,

title = "LNA design based on an extracted single gate finger model",

abstract = "A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic (EM) analysis. This allows techniques such as asymmetric inductive source feedback in an LNA to be modelled without prior fabrication of custom test structures. The 7-13 GHz, self-biased LNA has state-of-the-art noise figure (NF) of 1.25 dB at mid-band, gain of 20.5 ± 0.1 dB with 10 dB input and output matches, 10 dBm P1dB, 14 dBm Psat and 22 dBm OIP3. Excellent agreement is achieved with simulation. In a 3x3 QFN package the measured NF is 1.36 dB and the gain is 20 dB. The first-time design success achieved here validates the modelling and parameter extraction technique.",

author = "Mahon, {Simon J.} and Anna Dadello and Peter Vun and Jabra Tarazi and Young, {Alan C.} and Heimlich, {Michael C.} and Harvey, {James T.} and Parker, {Anthony E.}",

year = "2010",

doi = "10.1109/CSICS.2010.5619678",

language = "English",

isbn = "9781424474387",

series = "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "1--4",

booktitle = "2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010",

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note = "2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 ; Conference date: 03-10-2010 Through 06-10-2010",

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Mahon, SJ, Dadello, A, Vun, P, Tarazi, J, Young, AC, Heimlich, MC, Harvey, JT & Parker, AE 2010, LNA design based on an extracted single gate finger model. in 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010., 5619678, IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010, Monterey, CA, United States, 3/10/10. https://doi.org/10.1109/CSICS.2010.5619678

LNA design based on an extracted single gate finger model. / Mahon, Simon J.; Dadello, Anna; Vun, Peter et al.
2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 1-4 5619678 (IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Mahon, Simon J.

AU - Dadello, Anna

AU - Vun, Peter

AU - Tarazi, Jabra

AU - Young, Alan C.

AU - Heimlich, Michael C.

AU - Harvey, James T.

AU - Parker, Anthony E.

PY - 2010

Y1 - 2010

N2 - A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic (EM) analysis. This allows techniques such as asymmetric inductive source feedback in an LNA to be modelled without prior fabrication of custom test structures. The 7-13 GHz, self-biased LNA has state-of-the-art noise figure (NF) of 1.25 dB at mid-band, gain of 20.5 ± 0.1 dB with 10 dB input and output matches, 10 dBm P1dB, 14 dBm Psat and 22 dBm OIP3. Excellent agreement is achieved with simulation. In a 3x3 QFN package the measured NF is 1.36 dB and the gain is 20 dB. The first-time design success achieved here validates the modelling and parameter extraction technique.

AB - A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic (EM) analysis. This allows techniques such as asymmetric inductive source feedback in an LNA to be modelled without prior fabrication of custom test structures. The 7-13 GHz, self-biased LNA has state-of-the-art noise figure (NF) of 1.25 dB at mid-band, gain of 20.5 ± 0.1 dB with 10 dB input and output matches, 10 dBm P1dB, 14 dBm Psat and 22 dBm OIP3. Excellent agreement is achieved with simulation. In a 3x3 QFN package the measured NF is 1.36 dB and the gain is 20 dB. The first-time design success achieved here validates the modelling and parameter extraction technique.

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T3 - IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest

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BT - 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010

Y2 - 3 October 2010 through 6 October 2010

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Mahon SJ, Dadello A, Vun P, Tarazi J, Young AC, Heimlich MC et al. LNA design based on an extracted single gate finger model. In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 1-4. 5619678. (IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest). doi: 10.1109/CSICS.2010.5619678

LNA design based on an extracted single gate finger model

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