LNA design based on an extracted single gate finger model

Simon J. Mahon*, Anna Dadello, Peter Vun, Jabra Tarazi, Alan C. Young, Michael C. Heimlich, James T. Harvey, Anthony E. Parker

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    19 Citations (Scopus)

    Abstract

    A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic (EM) analysis. This allows techniques such as asymmetric inductive source feedback in an LNA to be modelled without prior fabrication of custom test structures. The 7-13 GHz, self-biased LNA has state-of-the-art noise figure (NF) of 1.25 dB at mid-band, gain of 20.5 ± 0.1 dB with 10 dB input and output matches, 10 dBm P1dB, 14 dBm Psat and 22 dBm OIP3. Excellent agreement is achieved with simulation. In a 3x3 QFN package the measured NF is 1.36 dB and the gain is 20 dB. The first-time design success achieved here validates the modelling and parameter extraction technique.

    Original languageEnglish
    Title of host publication2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages1-4
    Number of pages4
    ISBN (Print)9781424474387
    DOIs
    Publication statusPublished - 2010
    Event2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States
    Duration: 3 Oct 20106 Oct 2010

    Publication series

    NameIEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest
    PublisherIEEE
    ISSN (Print)1550-8781

    Other

    Other2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
    CountryUnited States
    CityMonterey, CA
    Period3/10/106/10/10

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