Localisation of thin- film resistive sensors for force sensing applications

Samta Sapra, Subhas Chandra Mukhopadhyay, Anindya Nag, Chinthaka P. Gooneratne

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

This paper presents the fabrication and implementation of novel resistive sensors for force-sensing applications. The sensors were developed from specific proportions of graphite and polydimethylsiloxane to form thin-film layers. Localisation was done on the sensors to determine the variation in their responses with respect to different locations and magnitude of the force. The ideology behind these sensors is their uses as tactile sensors for industrial applications and electronic skins for healthcare applications. These sensors showed significant response with a high R2 value for forces ranging from 1 N to 5 N. The podium provided by these sensors could be used as a reference to enhance the ideology on resistive sensing for localisation of the thin-film prototypes.
Original languageEnglish
Title of host publication2019 13th International Conference on Sensing Technology (ICST)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-6
Number of pages6
ISBN (Electronic)9781728148076
ISBN (Print)9781728148083
DOIs
Publication statusPublished - 2019
Event13th International Conference on Sensing Technology, ICST 2019 - Sydney, Australia
Duration: 2 Dec 20194 Dec 2019

Publication series

Name
ISSN (Print)2156-8065
ISSN (Electronic)2156-8073

Conference

Conference13th International Conference on Sensing Technology, ICST 2019
CountryAustralia
CitySydney
Period2/12/194/12/19

Keywords

  • Graphite
  • PDMS
  • Nanocomposite
  • Localization
  • Resistive

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  • Cite this

    Sapra, S., Mukhopadhyay, S. C., Nag, A., & Gooneratne, C. P. (2019). Localisation of thin- film resistive sensors for force sensing applications. In 2019 13th International Conference on Sensing Technology (ICST) (pp. 1-6). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICST46873.2019.9047720