Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 m

Josep Canet-Ferrer*, Guillermo Munoz-Matutano, David Fuster, Benito Alen, Yolanda Gonzalez, Luisa Gonzalez, Juan P. Martinez-Pastor

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembled quantum wires emitting at 1.5 m. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).

Original languageEnglish
Article number103502
Pages (from-to)1-6
Number of pages6
JournalJournal of Applied Physics
Volume110
Issue number10
DOIs
Publication statusPublished - 15 Nov 2011
Externally publishedYes

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    Canet-Ferrer, J., Munoz-Matutano, G., Fuster, D., Alen, B., Gonzalez, Y., Gonzalez, L., & Martinez-Pastor, J. P. (2011). Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 m. Journal of Applied Physics, 110(10), 1-6. [103502]. https://doi.org/10.1063/1.3660260