Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 m

Josep Canet-Ferrer; Guillermo Munoz-Matutano; David Fuster; Benito Alen; Yolanda Gonzalez; Luisa Gonzalez; Juan P. Martinez-Pastor

doi:10.1063/1.3660260

Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 m

Josep Canet-Ferrer^*, Guillermo Munoz-Matutano, David Fuster, Benito Alen, Yolanda Gonzalez, Luisa Gonzalez, Juan P. Martinez-Pastor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembled quantum wires emitting at 1.5 m. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).

Original language	English
Article number	103502
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of Applied Physics
Volume	110
Issue number	10
DOIs	https://doi.org/10.1063/1.3660260
Publication status	Published - 15 Nov 2011
Externally published	Yes

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10.1063/1.3660260

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abstract = "We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembled quantum wires emitting at 1.5 m. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).",

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AU - Canet-Ferrer, Josep

AU - Munoz-Matutano, Guillermo

AU - Fuster, David

AU - Alen, Benito

AU - Gonzalez, Yolanda

AU - Gonzalez, Luisa

AU - Martinez-Pastor, Juan P.

PY - 2011/11/15

Y1 - 2011/11/15

N2 - We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembled quantum wires emitting at 1.5 m. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).

AB - We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembled quantum wires emitting at 1.5 m. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).

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Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 m

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