Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Kenneth S A Butcher; Patrick P T Chen; James E. Downes

doi:10.1063/1.3673839

Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Kenneth S A Butcher^*, Patrick P T Chen, James E. Downes

^*Corresponding author for this work

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Abstract

For some InN films large amounts of excess nitrogen are seen at low growth temperatures. Recent studies have revised downward the defect formation energies for several forms of nitrogen rich point-defects in InN. Here we calculate an activation energy of 0.4 ± 0.1 eV for the thermally activated removal of much of the excess nitrogen, believed to be interstitial nitrogen. This low energy barrier is shown to support the case for a low defect formation energy of the same native defect, although it is pointed out that non-equilibrium plasma based conditions are required to reach these lower defect formation energies.

Original language	English
Article number	011913
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.3673839
Publication status	Published - 2 Jan 2012

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Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

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