Low-dimensional metal-halide perovskites as high-performance materials for memory applications

Xinwei Guan*, Zhihao Lei, Xuechao Yu, Chun-Ho Lin, Jing-Kai Huang, Chien-Yu Huang, Long Hu, Feng Li, Ajayan Vinu, Jiabao Yi, Tom Wu*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

54 Citations (Scopus)
70 Downloads (Pure)

Abstract

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property–performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

Original languageEnglish
Article number2203311
Pages (from-to)1-26
Number of pages26
JournalSmall
Volume18
Issue number38
DOIs
Publication statusPublished - 22 Sept 2022
Externally publishedYes

Bibliographical note

Copyright the Author(s) 2022. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

  • halide perovskites
  • low-dimensional
  • memory
  • resistive switching
  • stability

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