Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

O. Gelhausen*, H. N. Klein, M. R. Phillips, E. M. Goldys

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.

Original languageEnglish
Pages (from-to)3293-3295
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number16
DOIs
Publication statusPublished - 20 Oct 2003

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