Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

O. Gelhausen; H. N. Klein; M. R. Phillips; E. M. Goldys

doi:10.1063/1.1619210

Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

O. Gelhausen^*, H. N. Klein, M. R. Phillips, E. M. Goldys

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.

Original language	English
Pages (from-to)	3293-3295
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	16
DOIs	https://doi.org/10.1063/1.1619210
Publication status	Published - 20 Oct 2003

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abstract = "A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.",

author = "O. Gelhausen and Klein, {H. N.} and Phillips, {M. R.} and Goldys, {E. M.}",

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AU - Gelhausen, O.

AU - Klein, H. N.

AU - Phillips, M. R.

AU - Goldys, E. M.

PY - 2003/10/20

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AB - A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.

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JO - Applied Physics Letters

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ER -

Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

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