Low propagation loss silicon-on-sapphire nanowires for the mid-IR

D. J. Moss, F. Li, S. Jackson, E. Magi, C. Grillet, S. Madden, Y. Moghe, A. Read, S. G. Duvall, P. Atanackovic, B. J. Eggleton

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearch

Abstract

We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of <1dB/cm at λ 1550nm, <1.5dB/cm at λ=2080nm and <2dB/cm at λ5.08 μm.

LanguageEnglish
Title of host publication2011 IEEE Photonics Society Summer Topical Meeting Series
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages61-62
Number of pages2
ISBN (Electronic)9781424457311 , 9781424457298
ISBN (Print)9781424457304
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE Photonics Society Summer Topical Meeting Series - Montreal, QC, Canada
Duration: 18 Jul 201120 Jul 2011

Other

Other2011 IEEE Photonics Society Summer Topical Meeting Series
CountryCanada
CityMontreal, QC
Period18/07/1120/07/11

Fingerprint

Sapphire
Nanowires
sapphire
nanowires
Silicon
propagation
silicon
Optics
optics
Infrared radiation

Cite this

Moss, D. J., Li, F., Jackson, S., Magi, E., Grillet, C., Madden, S., ... Eggleton, B. J. (2011). Low propagation loss silicon-on-sapphire nanowires for the mid-IR. In 2011 IEEE Photonics Society Summer Topical Meeting Series (pp. 61-62). [6000044] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PHOSST.2011.6000044
Moss, D. J. ; Li, F. ; Jackson, S. ; Magi, E. ; Grillet, C. ; Madden, S. ; Moghe, Y. ; Read, A. ; Duvall, S. G. ; Atanackovic, P. ; Eggleton, B. J. / Low propagation loss silicon-on-sapphire nanowires for the mid-IR. 2011 IEEE Photonics Society Summer Topical Meeting Series. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2011. pp. 61-62
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title = "Low propagation loss silicon-on-sapphire nanowires for the mid-IR",
abstract = "We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of <1dB/cm at λ 1550nm, <1.5dB/cm at λ=2080nm and <2dB/cm at λ5.08 μm.",
author = "Moss, {D. J.} and F. Li and S. Jackson and E. Magi and C. Grillet and S. Madden and Y. Moghe and A. Read and Duvall, {S. G.} and P. Atanackovic and Eggleton, {B. J.}",
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Moss, DJ, Li, F, Jackson, S, Magi, E, Grillet, C, Madden, S, Moghe, Y, Read, A, Duvall, SG, Atanackovic, P & Eggleton, BJ 2011, Low propagation loss silicon-on-sapphire nanowires for the mid-IR. in 2011 IEEE Photonics Society Summer Topical Meeting Series., 6000044, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 61-62, 2011 IEEE Photonics Society Summer Topical Meeting Series, Montreal, QC, Canada, 18/07/11. https://doi.org/10.1109/PHOSST.2011.6000044

Low propagation loss silicon-on-sapphire nanowires for the mid-IR. / Moss, D. J.; Li, F.; Jackson, S.; Magi, E.; Grillet, C.; Madden, S.; Moghe, Y.; Read, A.; Duvall, S. G.; Atanackovic, P.; Eggleton, B. J.

2011 IEEE Photonics Society Summer Topical Meeting Series. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 61-62 6000044.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearch

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T1 - Low propagation loss silicon-on-sapphire nanowires for the mid-IR

AU - Moss, D. J.

AU - Li, F.

AU - Jackson, S.

AU - Magi, E.

AU - Grillet, C.

AU - Madden, S.

AU - Moghe, Y.

AU - Read, A.

AU - Duvall, S. G.

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AU - Eggleton, B. J.

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AB - We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of <1dB/cm at λ 1550nm, <1.5dB/cm at λ=2080nm and <2dB/cm at λ5.08 μm.

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BT - 2011 IEEE Photonics Society Summer Topical Meeting Series

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Moss DJ, Li F, Jackson S, Magi E, Grillet C, Madden S et al. Low propagation loss silicon-on-sapphire nanowires for the mid-IR. In 2011 IEEE Photonics Society Summer Topical Meeting Series. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2011. p. 61-62. 6000044 https://doi.org/10.1109/PHOSST.2011.6000044