@inproceedings{1df4257977ac4a8ba1158bba502b7a05,
title = "Low-temperature epitaxial growth of Ge on Si, towards a cost-effective substrate for III-V solar cells",
abstract = "Epitaxial Ge on Si could be used as a virtual Ge substrate for III-V solar cells which has superior mechanical properties and is less expensive than Ge wafers. Aluminiumassisted crystallization via magnetron sputtering offers a low-cost method allows the epitaxy of Ge on Si at low temperatures. The novelty of our one-step aluminium-assisted crystallization of Ge epitaxy on Si lies in the elimination of the post-deposition annealing step. Our process simply requires sequential depositions of Al and Ge films via magnetron sputtering in the same chamber without breaking the vacuum. By applying an insitu low-temperature (100°C) heat treatment in between Al and Ge depositions, Ge epitaxy on Si is achieved.",
author = "Ziheng Liu and Xiaojing Hao and Anita Ho-Baillie and Green, {Martin A.}",
year = "2018",
doi = "10.1109/PVSC.2018.8547316",
language = "English",
isbn = "9781538685303",
volume = "Piscataway, NJ",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "216--219",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)",
address = "United States",
note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
}