Low temperature growth of gallium nitride on quartz and sapphire substrates

E. M. Goldys*, M. J. Paterson, H. Y. Zuo, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380°C and 625°C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.

Original languageEnglish
Pages (from-to)1205-1208
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
Publication statusPublished - 1998

Keywords

  • Low Temperature Laser and Plasma Assisted Metalorganic Chemical Vapour Deposition
  • Optical Absorption
  • Quartz
  • Raman Effect
  • Sapphire
  • X-Ray Diffraction

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    Goldys, E. M., Paterson, M. J., Zuo, H. Y., & Tansley, T. L. (1998). Low temperature growth of gallium nitride on quartz and sapphire substrates. Materials Science Forum, 264-268(PART 2), 1205-1208.