Low temperature growth of gallium nitride on quartz and sapphire substrates

E. M. Goldys*, M. J. Paterson, H. Y. Zuo, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380°C and 625°C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.

    Original languageEnglish
    Pages (from-to)1205-1208
    Number of pages4
    JournalMaterials Science Forum
    Issue numberPART 2
    Publication statusPublished - 1998


    • Low Temperature Laser and Plasma Assisted Metalorganic Chemical Vapour Deposition
    • Optical Absorption
    • Quartz
    • Raman Effect
    • Sapphire
    • X-Ray Diffraction


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