Low temperature growth of gallium nitride on quartz and sapphire substrates

E. M. Goldys; M. J. Paterson; H. Y. Zuo; T. L. Tansley

Low temperature growth of gallium nitride on quartz and sapphire substrates

E. M. Goldys^*, M. J. Paterson, H. Y. Zuo, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380°C and 625°C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.

Original language	English
Pages (from-to)	1205-1208
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
Publication status	Published - 1998

Keywords

Low Temperature Laser and Plasma Assisted Metalorganic Chemical Vapour Deposition
Optical Absorption
Quartz
Raman Effect
Sapphire
X-Ray Diffraction

Cite this

@article{44999c5a9a4543a3b40d385633d39061,

title = "Low temperature growth of gallium nitride on quartz and sapphire substrates",

abstract = "Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380°C and 625°C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.",

keywords = "Low Temperature Laser and Plasma Assisted Metalorganic Chemical Vapour Deposition, Optical Absorption, Quartz, Raman Effect, Sapphire, X-Ray Diffraction",

author = "Goldys, {E. M.} and Paterson, {M. J.} and Zuo, {H. Y.} and Tansley, {T. L.}",

year = "1998",

language = "English",

volume = "264-268",

pages = "1205--1208",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "PART 2",

}

TY - JOUR

T1 - Low temperature growth of gallium nitride on quartz and sapphire substrates

AU - Goldys, E. M.

AU - Paterson, M. J.

AU - Zuo, H. Y.

AU - Tansley, T. L.

PY - 1998

Y1 - 1998

N2 - Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380°C and 625°C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.

AB - Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380°C and 625°C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.

KW - Low Temperature Laser and Plasma Assisted Metalorganic Chemical Vapour Deposition

KW - Optical Absorption

KW - Quartz

KW - Raman Effect

KW - Sapphire

KW - X-Ray Diffraction

UR - http://www.scopus.com/inward/record.url?scp=11644325515&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:11644325515

SN - 0255-5476

VL - 264-268

SP - 1205

EP - 1208

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 2

ER -

Low temperature growth of gallium nitride on quartz and sapphire substrates

Abstract

Keywords

Other files and links

Fingerprint

Cite this