Luminescent properties of wide bandgap materials at room temperature

M. Godlewski; J. Szmidt; A. Olszyna; A. Werbowy; E. Łusakowska; M. R. Phillips; E. M. Goldys; A. Sokolowska

doi:10.1002/pssc.200303935

Luminescent properties of wide bandgap materials at room temperature

M. Godlewski^*, J. Szmidt, A. Olszyna, A. Werbowy, E. Łusakowska, M. R. Phillips, E. M. Goldys, A. Sokolowska

^*Corresponding author for this work

Research output: Contribution to journal › Article

Abstract

Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

Original language	English
Pages (from-to)	213-218
Number of pages	6
Journal	Physica Status Solidi C: Conferences
Volume	1
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200303935
Publication status	Published - 2004

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10.1002/pssc.200303935

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title = "Luminescent properties of wide bandgap materials at room temperature",

abstract = "Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.",

author = "M. Godlewski and J. Szmidt and A. Olszyna and A. Werbowy and E. {\L}usakowska and Phillips, {M. R.} and Goldys, {E. M.} and A. Sokolowska",

year = "2004",

doi = "10.1002/pssc.200303935",

language = "English",

volume = "1",

pages = "213--218",

journal = "Physica Status Solidi C: Conferences",

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T1 - Luminescent properties of wide bandgap materials at room temperature

AU - Godlewski, M.

AU - Szmidt, J.

AU - Olszyna, A.

AU - Werbowy, A.

AU - Łusakowska, E.

AU - Phillips, M. R.

AU - Goldys, E. M.

AU - Sokolowska, A.

PY - 2004

Y1 - 2004

N2 - Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

AB - Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

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U2 - 10.1002/pssc.200303935

DO - 10.1002/pssc.200303935

M3 - Article

AN - SCOPUS:2342599799

SN - 1610-1634

VL - 1

SP - 213

EP - 218

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 2

ER -

Luminescent properties of wide bandgap materials at room temperature

Abstract

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