Luminescent properties of wide bandgap materials at room temperature

M. Godlewski*, J. Szmidt, A. Olszyna, A. Werbowy, E. Łusakowska, M. R. Phillips, E. M. Goldys, A. Sokolowska

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

Original languageEnglish
Pages (from-to)213-218
Number of pages6
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number2
DOIs
Publication statusPublished - 2004

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