Luminescent properties of wide bandgap materials at room temperature

M. Godlewski*, J. Szmidt, A. Olszyna, A. Werbowy, E. Łusakowska, M. R. Phillips, E. M. Goldys, A. Sokolowska

*Corresponding author for this work

    Research output: Contribution to journalArticle


    Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

    Original languageEnglish
    Pages (from-to)213-218
    Number of pages6
    JournalPhysica Status Solidi C: Conferences
    Issue number2
    Publication statusPublished - 2004


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