Abstract
Band-gap photoluminescence (PL) is used to establish the optical signature of a GaAs-Ga1-xAlxAs heterojunction in the extreme quantum limit. The temperature and field dependence of new PL structure maps a phase boundary which correlates with the electron liquid-solid transition.
Original language | English |
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Pages (from-to) | 7957-7960 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 46 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1992 |
Externally published | Yes |