Abstract
Band-gap photoluminescence (PL) is used to establish the optical signature of a GaAs-Ga1-xAlxAs heterojunction in the extreme quantum limit. The temperature and field dependence of new PL structure maps a phase boundary which correlates with the electron liquid-solid transition.
| Original language | English |
|---|---|
| Pages (from-to) | 7957-7960 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1992 |
| Externally published | Yes |