Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

T. Paskova; E. M. Goldys; P. P. Paskov; Q. Wahab; L. Wilzen; M. P. De Jong; B. Monemar

doi:10.1063/1.1381421

Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

T. Paskova^*, E. M. Goldys, P. P. Paskov, Q. Wahab, L. Wilzen, M. P. De Jong, B. Monemar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism.

Original language	English
Pages (from-to)	4130-4132
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	26
DOIs	https://doi.org/10.1063/1.1381421
Publication status	Published - 25 Jun 2001

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title = "Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN",

abstract = "The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism.",

author = "T. Paskova and Goldys, {E. M.} and Paskov, {P. P.} and Q. Wahab and L. Wilzen and {De Jong}, {M. P.} and B. Monemar",

year = "2001",

month = jun,

day = "25",

doi = "10.1063/1.1381421",

language = "English",

volume = "78",

pages = "4130--4132",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

AU - Paskova, T.

AU - Goldys, E. M.

AU - Paskov, P. P.

AU - Wahab, Q.

AU - Wilzen, L.

AU - De Jong, M. P.

AU - Monemar, B.

PY - 2001/6/25

Y1 - 2001/6/25

N2 - The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism.

AB - The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0035948156&partnerID=8YFLogxK

U2 - 10.1063/1.1381421

DO - 10.1063/1.1381421

M3 - Article

AN - SCOPUS:0035948156

VL - 78

SP - 4130

EP - 4132

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -

Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

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