Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

T. Paskova*, E. M. Goldys, P. P. Paskov, Q. Wahab, L. Wilzen, M. P. De Jong, B. Monemar

*Corresponding author for this work

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Abstract

The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism.

Original languageEnglish
Pages (from-to)4130-4132
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number26
DOIs
Publication statusPublished - 25 Jun 2001

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    Paskova, T., Goldys, E. M., Paskov, P. P., Wahab, Q., Wilzen, L., De Jong, M. P., & Monemar, B. (2001). Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN. Applied Physics Letters, 78(26), 4130-4132. https://doi.org/10.1063/1.1381421