Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

T. Paskova; P. P. Paskov; E. M. Goldys; V. Darakchieva; U. Södervall; M. Godlewski; M. Zielinski; E. Valcheva; C. F. Carlström; Q. Wahab; B. Monemar

doi:10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

T. Paskova^*, P. P. Paskov, E. M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C. F. Carlström, Q. Wahab, B. Monemar

^*Corresponding author for this work

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2 Citations (Scopus)

Abstract

We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.

Original language	English
Pages (from-to)	447-451
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9
Publication status	Published - Nov 2001

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10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

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Paskova, T., Paskov, P. P., Goldys, E. M., Darakchieva, V., Södervall, U., Godlewski, M., Zielinski, M., Valcheva, E., Carlström, C. F., Wahab, Q., & Monemar, B. (2001). Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN. Physica Status Solidi (A) Applied Research, 188(1), 447-451. https://doi.org/10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

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abstract = "We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.",

author = "T. Paskova and Paskov, {P. P.} and Goldys, {E. M.} and V. Darakchieva and U. S{\"o}dervall and M. Godlewski and M. Zielinski and E. Valcheva and Carlstr{\"o}m, {C. F.} and Q. Wahab and B. Monemar",

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Paskova, T, Paskov, PP, Goldys, EM, Darakchieva, V, Södervall, U, Godlewski, M, Zielinski, M, Valcheva, E, Carlström, CF, Wahab, Q & Monemar, B 2001, 'Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN', Physica Status Solidi (A) Applied Research, vol. 188, no. 1, pp. 447-451. https://doi.org/10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

TY - JOUR

T1 - Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

AU - Paskova, T.

AU - Paskov, P. P.

AU - Goldys, E. M.

AU - Darakchieva, V.

AU - Södervall, U.

AU - Godlewski, M.

AU - Zielinski, M.

AU - Valcheva, E.

AU - Carlström, C. F.

AU - Wahab, Q.

AU - Monemar, B.

PY - 2001/11

Y1 - 2001/11

N2 - We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.

AB - We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.

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SN - 0031-8965

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SP - 447

EP - 451

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

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