Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

T. Paskova*, P. P. Paskov, E. M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C. F. Carlström, Q. Wahab, B. Monemar

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.

Original languageEnglish
Pages (from-to)447-451
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
Publication statusPublished - Nov 2001

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