Measurement and characterization of HEMT dynamics

A. E. Parker; J. G. Rathmell

doi:10.1109/22.963144

Measurement and characterization of HEMT dynamics

A. E. Parker^*, J. G. Rathmell

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The variation of high electron-mobility transistor (HEMT) large-signal behavior with a change in operating condition is examined with a view to understanding the dynamics involved and developing a modeling strategy. The observed variation exhibits the dynamics of thermal, impact ionization, and trapping effects. A novel measurement of drain characteristic transients gives time-evolution information that clearly shows these as separate quantifiable phenomena with significant dependence on initial operating conditions. A drain-current model that describes high-frequency characteristics with pinchoff, gain, and drain feedback parameters is adapted to describe the variation of the characteristics with changing operating conditions. The results reported give insight and grounding for simulation of HEMT circuits.

Original language	English
Pages (from-to)	2105-2111
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	49
Issue number	11
DOIs	https://doi.org/10.1109/22.963144
Publication status	Published - Nov 2001

Bibliographical note

Copyright 2001 IEEE. Reprinted from IEEE transactions on microwave theory and techniques. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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abstract = "The variation of high electron-mobility transistor (HEMT) large-signal behavior with a change in operating condition is examined with a view to understanding the dynamics involved and developing a modeling strategy. The observed variation exhibits the dynamics of thermal, impact ionization, and trapping effects. A novel measurement of drain characteristic transients gives time-evolution information that clearly shows these as separate quantifiable phenomena with significant dependence on initial operating conditions. A drain-current model that describes high-frequency characteristics with pinchoff, gain, and drain feedback parameters is adapted to describe the variation of the characteristics with changing operating conditions. The results reported give insight and grounding for simulation of HEMT circuits.",

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Measurement and characterization of HEMT dynamics

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