TY - JOUR
T1 - Measurement and modeling of thermal behavior in InGaP/GaAs HBTs
AU - Sevimli, Oya
AU - Parker, Anthony E.
AU - Fattorini, Anthony P.
AU - Mahon, Simon J.
PY - 2013
Y1 - 2013
N2 - Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temperature, and from temperature-controlled dc measurements. Low-frequency S-parameters at room temperature are accurate for extracting thermal corner frequencies. However, the dc value of the thermal impedance depends on the emitter resistance and the dc current definitions of the HBT model; hence, they need to be extracted together from temperature-dependent dc measurements. The resulting thermal-impedance model explains the low-frequency dispersion well at varying bias conditions, and it is suitable for nonlinear circuit analysis.
AB - Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temperature, and from temperature-controlled dc measurements. Low-frequency S-parameters at room temperature are accurate for extracting thermal corner frequencies. However, the dc value of the thermal impedance depends on the emitter resistance and the dc current definitions of the HBT model; hence, they need to be extracted together from temperature-dependent dc measurements. The resulting thermal-impedance model explains the low-frequency dispersion well at varying bias conditions, and it is suitable for nonlinear circuit analysis.
UR - http://www.scopus.com/inward/record.url?scp=84887101740&partnerID=8YFLogxK
U2 - 10.1109/TED.2013.2254117
DO - 10.1109/TED.2013.2254117
M3 - Article
AN - SCOPUS:84887101740
SN - 0018-9383
VL - 60
SP - 1632
EP - 1639
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 5
ER -