Measurement and simulation of IM distortion in high mobility transistors

Guoli Qu; Anthony E. Parker

doi:10.1109/ICSICT.2001.982149

Measurement and simulation of IM distortion in high mobility transistors

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu, Paul Yu, Hiroshi Iwai
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1337-1339
Number of pages	3
Volume	2
ISBN (Electronic)	0780365208, 9780780365209
ISBN (Print)	7900081607
DOIs	https://doi.org/10.1109/ICSICT.2001.982149
Publication status	Published - Oct 2001
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT - 2001 - Shanghai, China Duration: 22 Oct 2001 → 25 Oct 2001

Other

Other	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT - 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

Access to Document

10.1109/ICSICT.2001.982149

Cite this

Qu, G., & Parker, A. E. (2001). Measurement and simulation of IM distortion in high mobility transistors. In B.-Z. Li, G.-P. Ru, X.-P. Qu, P. Yu, & H. Iwai (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (Vol. 2, pp. 1337-1339). Article 982149 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICSICT.2001.982149

Qu, Guoli ; Parker, Anthony E. / Measurement and simulation of IM distortion in high mobility transistors. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Bing-Zong Li ; Guo-Ping Ru ; Xin-Ping Qu ; Paul Yu ; Hiroshi Iwai. Vol. 2 Piscataway, N.J. : Institute of Electrical and Electronics Engineers (IEEE), 2001. pp. 1337-1339

@inproceedings{ffe5099071124e06a53a4bca8383167a,

title = "Measurement and simulation of IM distortion in high mobility transistors",

abstract = "This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.",

author = "Guoli Qu and Parker, {Anthony E.}",

year = "2001",

month = oct,

doi = "10.1109/ICSICT.2001.982149",

language = "English",

isbn = "7900081607",

volume = "2",

pages = "1337--1339",

editor = "Bing-Zong Li and Guo-Ping Ru and Xin-Ping Qu and Paul Yu and Hiroshi Iwai",

booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT - 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

}

Qu, G & Parker, AE 2001, Measurement and simulation of IM distortion in high mobility transistors. in B-Z Li, G-P Ru, X-P Qu, P Yu & H Iwai (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. vol. 2, 982149, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 1337-1339, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT - 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.982149

Measurement and simulation of IM distortion in high mobility transistors. / Qu, Guoli; Parker, Anthony E.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Bing-Zong Li; Guo-Ping Ru; Xin-Ping Qu; Paul Yu; Hiroshi Iwai. Vol. 2 Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 2001. p. 1337-1339 982149.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Measurement and simulation of IM distortion in high mobility transistors

AU - Qu, Guoli

AU - Parker, Anthony E.

PY - 2001/10

Y1 - 2001/10

N2 - This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.

AB - This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.

UR - http://www.scopus.com/inward/record.url?scp=84964523299&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2001.982149

DO - 10.1109/ICSICT.2001.982149

M3 - Conference proceeding contribution

AN - SCOPUS:84964523299

SN - 7900081607

VL - 2

SP - 1337

EP - 1339

BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

A2 - Qu, Xin-Ping

A2 - Yu, Paul

A2 - Iwai, Hiroshi

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, N.J.

T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT - 2001

Y2 - 22 October 2001 through 25 October 2001

ER -

Qu G, Parker AE. Measurement and simulation of IM distortion in high mobility transistors. In Li BZ, Ru GP, Qu XP, Yu P, Iwai H, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 2. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE). 2001. p. 1337-1339. 982149 doi: 10.1109/ICSICT.2001.982149

Measurement and simulation of IM distortion in high mobility transistors

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this