Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Fan Wang*, Qian Gao, Kun Peng, Yanan Guo, Zhe Li, Lan Fu, Leigh Morris Smith, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.

Original languageEnglish
Title of host publicationCOMMAD 2014
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages272-274
Number of pages3
ISBN (Electronic)9781479968688
ISBN (Print)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
Externally publishedYes
Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
Duration: 14 Dec 201417 Dec 2014

Other

Other2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
CountryAustralia
CityPerth
Period14/12/1417/12/14

Keywords

  • doping
  • non-radiative lifetime
  • photoluminescence
  • semiconductor nanowires

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