Measurements of piezoelectric coefficients of nitride semiconductor films

I. L. Guy; E. M. Goldys; S. Muensit

doi:10.1109/SIM.2000.939197

Measurements of piezoelectric coefficients of nitride semiconductor films

I. L. Guy, E. M. Goldys, S. Muensit

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

7 Citations (Scopus)

Abstract

Piezoelectric coefficients of the wurtzite phase of the important semiconducting materials GaN and AlN have been measured using optical interferometry. Both the extensional and shear strain coefficients have been evaluated from direct measurements of the relevant displacements of the film surface. The measured value of the thickness coefficient d₃₃, was 2.0 pm V^-1 for polycrystalline GaN and 2.8 pm V^-1 for single crystal material. The measured d₃₃ coefficient for polycrystalline AlN was 4.0 pm V^-1. The measured values of the d₁₅ coefficient were -3.1 pm V^-1 for GaN and -3.6 pm V^-1 for AlN. The electromechanical response is found to include a significant contribution from the nonlinear effect of electrostriction. The measured value of the electrostrictive coefficient M₃₃ in a polycrystalline sample of GaN was 1.2×10^-18 m² V^-2. The piezoelectric measurement also provides a simple method for identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films studied.

Original language	English
Title of host publication	2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of Publication	Canberra
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	55-58
Number of pages	4
Volume	2000-January
ISBN (Print)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939197
Publication status	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	3/07/00 → 7/07/00

Keywords

Electrostriction
Gallium nitride
Optical interferometry
Optical materials
Phase measurement
Piezoelectric films
Piezoelectric materials
Semiconductivity
Semiconductor materials
Strain measurement

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10.1109/SIM.2000.939197

Cite this

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title = "Measurements of piezoelectric coefficients of nitride semiconductor films",

abstract = "Piezoelectric coefficients of the wurtzite phase of the important semiconducting materials GaN and AlN have been measured using optical interferometry. Both the extensional and shear strain coefficients have been evaluated from direct measurements of the relevant displacements of the film surface. The measured value of the thickness coefficient d33, was 2.0 pm V-1 for polycrystalline GaN and 2.8 pm V-1 for single crystal material. The measured d33 coefficient for polycrystalline AlN was 4.0 pm V-1. The measured values of the d15 coefficient were -3.1 pm V-1 for GaN and -3.6 pm V-1 for AlN. The electromechanical response is found to include a significant contribution from the nonlinear effect of electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN was 1.2×10-18 m2 V-2. The piezoelectric measurement also provides a simple method for identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films studied.",

keywords = "Electrostriction, Gallium nitride, Optical interferometry, Optical materials, Phase measurement, Piezoelectric films, Piezoelectric materials, Semiconductivity, Semiconductor materials, Strain measurement",

author = "Guy, {I. L.} and Goldys, {E. M.} and S. Muensit",

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doi = "10.1109/SIM.2000.939197",

language = "English",

isbn = "0780358147 ",

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booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",

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note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

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Guy, IL, Goldys, EM & Muensit, S 2000, Measurements of piezoelectric coefficients of nitride semiconductor films. in 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. vol. 2000-January, 939197, Institute of Electrical and Electronics Engineers (IEEE), Canberra, pp. 55-58, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 3/07/00. https://doi.org/10.1109/SIM.2000.939197

Measurements of piezoelectric coefficients of nitride semiconductor films. / Guy, I. L.; Goldys, E. M.; Muensit, S.
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January Canberra: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 55-58 939197.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Measurements of piezoelectric coefficients of nitride semiconductor films

AU - Guy, I. L.

AU - Goldys, E. M.

AU - Muensit, S.

PY - 2000

Y1 - 2000

N2 - Piezoelectric coefficients of the wurtzite phase of the important semiconducting materials GaN and AlN have been measured using optical interferometry. Both the extensional and shear strain coefficients have been evaluated from direct measurements of the relevant displacements of the film surface. The measured value of the thickness coefficient d33, was 2.0 pm V-1 for polycrystalline GaN and 2.8 pm V-1 for single crystal material. The measured d33 coefficient for polycrystalline AlN was 4.0 pm V-1. The measured values of the d15 coefficient were -3.1 pm V-1 for GaN and -3.6 pm V-1 for AlN. The electromechanical response is found to include a significant contribution from the nonlinear effect of electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN was 1.2×10-18 m2 V-2. The piezoelectric measurement also provides a simple method for identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films studied.

AB - Piezoelectric coefficients of the wurtzite phase of the important semiconducting materials GaN and AlN have been measured using optical interferometry. Both the extensional and shear strain coefficients have been evaluated from direct measurements of the relevant displacements of the film surface. The measured value of the thickness coefficient d33, was 2.0 pm V-1 for polycrystalline GaN and 2.8 pm V-1 for single crystal material. The measured d33 coefficient for polycrystalline AlN was 4.0 pm V-1. The measured values of the d15 coefficient were -3.1 pm V-1 for GaN and -3.6 pm V-1 for AlN. The electromechanical response is found to include a significant contribution from the nonlinear effect of electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN was 1.2×10-18 m2 V-2. The piezoelectric measurement also provides a simple method for identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films studied.

KW - Electrostriction

KW - Gallium nitride

KW - Optical interferometry

KW - Optical materials

KW - Phase measurement

KW - Piezoelectric films

KW - Piezoelectric materials

KW - Semiconductivity

KW - Semiconductor materials

KW - Strain measurement

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DO - 10.1109/SIM.2000.939197

M3 - Conference proceeding contribution

AN - SCOPUS:67649650532

SN - 0780358147

VL - 2000-January

SP - 55

EP - 58

BT - 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Canberra

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

Y2 - 3 July 2000 through 7 July 2000

ER -

Measurements of piezoelectric coefficients of nitride semiconductor films

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