Measurements of piezoelectric coefficients of nitride semiconductor films

I. L. Guy, E. M. Goldys, S. Muensit

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

6 Citations (Scopus)

Abstract

Piezoelectric coefficients of the wurtzite phase of the important semiconducting materials GaN and AlN have been measured using optical interferometry. Both the extensional and shear strain coefficients have been evaluated from direct measurements of the relevant displacements of the film surface. The measured value of the thickness coefficient d33, was 2.0 pm V-1 for polycrystalline GaN and 2.8 pm V-1 for single crystal material. The measured d33 coefficient for polycrystalline AlN was 4.0 pm V-1. The measured values of the d15 coefficient were -3.1 pm V-1 for GaN and -3.6 pm V-1 for AlN. The electromechanical response is found to include a significant contribution from the nonlinear effect of electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN was 1.2×10-18 m2 V-2. The piezoelectric measurement also provides a simple method for identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films studied.

Original languageEnglish
Title of host publication2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of PublicationCanberra
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages55-58
Number of pages4
Volume2000-January
ISBN (Print)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 3 Jul 20007 Jul 2000

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period3/07/007/07/00

Keywords

  • Electrostriction
  • Gallium nitride
  • Optical interferometry
  • Optical materials
  • Phase measurement
  • Piezoelectric films
  • Piezoelectric materials
  • Semiconductivity
  • Semiconductor materials
  • Strain measurement

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