Abstract
In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.
| Original language | English |
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| Patent number | US8445961 B2 |
| Priority date | 20/09/10 |
| Publication status | Published - 21 May 2013 |