Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)

Sourabh Khandelwal; Josef Watts

Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)

Sourabh Khandelwal (Inventor), Josef Watts (Inventor)

School of Engineering

Research output: Patent

Abstract

In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.

Original language	English
Patent number	US8445961 B2
Priority date	20/09/10
Publication status	Published - 21 May 2013

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title = "Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)",

abstract = "In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.",

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N2 - In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.

AB - In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.

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