Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)

Sourabh Khandelwal (Inventor), Josef Watts (Inventor)

Research output: Patent

Abstract

In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.
Original languageEnglish
Patent numberUS8445961 B2
Priority date20/09/10
Publication statusPublished - 21 May 2013

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