Micro-structured nanomaterial

Noushin Nasiri; Xiaohu Chen

Micro-structured nanomaterial

Noushin Nasiri (Inventor), Xiaohu Chen (Inventor)

Research output: Patent

Abstract

A process is described for forming a nanostructured metal oxide micro-cluster. The process comprises the steps of obtaining a thin film of metal oxide attached to an underlying surface. The thin film has a peripheral edge. A droplet of volatile solvent is added adjacent to the peripheral edge of the thin film. The droplet of volatile solvent wets the thin film of metal oxide and subsequently evaporates, thereby allowing capillary force induced self-assembly to change the thin film structure.

Original language	English
Patent number	WO2024173999
IPC	H10K 30/35 2023.1,B82Y 20/00 2011.1,C01G 9/03 2006.1,H01L 31/02 2006.1
Priority date	23/02/23
Filing date	23/02/24
Publication status	Submitted - 29 Aug 2024

Bibliographical note

Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CV, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IQ, IR, IS, IT, JM, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, MG, MK, MN, MU, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, CV, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SC, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

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@misc{6ca912ce91d84f7c8b3dd0cd09805e22,

title = "Micro-structured nanomaterial",

abstract = "A process is described for forming a nanostructured metal oxide micro-cluster. The process comprises the steps of obtaining a thin film of metal oxide attached to an underlying surface. The thin film has a peripheral edge. A droplet of volatile solvent is added adjacent to the peripheral edge of the thin film. The droplet of volatile solvent wets the thin film of metal oxide and subsequently evaporates, thereby allowing capillary force induced self-assembly to change the thin film structure.",

author = "Noushin Nasiri and Xiaohu Chen",

note = "Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CV, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IQ, IR, IS, IT, JM, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, MG, MK, MN, MU, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW African Regional Intellectual Property Organization (ARIPO) (BW, CV, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SC, SD, SL, ST, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM) European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR) African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG); WO2024173999; H10K 30/35 2023.1,B82Y 20/00 2011.1,C01G 9/03 2006.1,H01L 31/02 2006.1",

year = "2024",

month = aug,

day = "29",

language = "English",

type = "Patent",

}

TY - PAT

T1 - Micro-structured nanomaterial

AU - Nasiri, Noushin

AU - Chen, Xiaohu

N1 - Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CV, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IQ, IR, IS, IT, JM, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, MG, MK, MN, MU, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW African Regional Intellectual Property Organization (ARIPO) (BW, CV, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SC, SD, SL, ST, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM) European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR) African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

PY - 2024/8/29

Y1 - 2024/8/29

N2 - A process is described for forming a nanostructured metal oxide micro-cluster. The process comprises the steps of obtaining a thin film of metal oxide attached to an underlying surface. The thin film has a peripheral edge. A droplet of volatile solvent is added adjacent to the peripheral edge of the thin film. The droplet of volatile solvent wets the thin film of metal oxide and subsequently evaporates, thereby allowing capillary force induced self-assembly to change the thin film structure.

AB - A process is described for forming a nanostructured metal oxide micro-cluster. The process comprises the steps of obtaining a thin film of metal oxide attached to an underlying surface. The thin film has a peripheral edge. A droplet of volatile solvent is added adjacent to the peripheral edge of the thin film. The droplet of volatile solvent wets the thin film of metal oxide and subsequently evaporates, thereby allowing capillary force induced self-assembly to change the thin film structure.

M3 - Patent

M1 - WO2024173999

Y2 - 2024/02/23

ER -

Micro-structured nanomaterial

Abstract

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