Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition

B. M. Kinder; E. M. Goldys

doi:10.1063/1.122137

Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition

B. M. Kinder^*, E. M. Goldys

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Studies of the growth of GaSb self-assembled islands on GaAs and their morphological evolution for varying GaSb coverage are presented. Islands had a mean height of 15 nm and planar dimensions of 60 by 130 nm. Evolution of the island height, width and length shows that the island height and width increases rapidly in the first 2 s and then stabilizes, while the island length increases linearly. This behavior is interpreted using the theory by Tersoff and Tromp [Phys. Rev. Lett. 70, 2782 (1993)]. The volume growth was found to be initially faster than bulk growth.

Original language	English
Pages (from-to)	1233-1235
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.122137
Publication status	Published - 1998

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10.1063/1.122137

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AB - Studies of the growth of GaSb self-assembled islands on GaAs and their morphological evolution for varying GaSb coverage are presented. Islands had a mean height of 15 nm and planar dimensions of 60 by 130 nm. Evolution of the island height, width and length shows that the island height and width increases rapidly in the first 2 s and then stabilizes, while the island length increases linearly. This behavior is interpreted using the theory by Tersoff and Tromp [Phys. Rev. Lett. 70, 2782 (1993)]. The volume growth was found to be initially faster than bulk growth.

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Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition

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