Abstract
Well-crystallized Bi-Te single crystals with different ratios were grown in vertical Bridgman method. Broadband emission was detected in 1900-3000 nm. Annealing treatment and XPS test revealed the emission center might be Bi clusters. The forming process and energy level transition of Bi clusters were given in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 1982-1985 |
| Number of pages | 4 |
| Journal | Optical Materials |
| Volume | 36 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Oct 2014 |
| Externally published | Yes |
Keywords
- single crystal
- Bi clusters
- mid-infrared luminescence
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