Abstract
This paper describes a novel, bi-directional millimetre-wave amplifier, which relies upon the inherent symmetry of devices like FETs or HEMTs. The direction of amplification can be reversed by simply reversing the polarity of the DC bias applied to the active devices. Practical bi-directional amplifier designs have been implemented at 2.5, 42 and 60 GHz.
Original language | English |
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Title of host publication | Proceedings of the Topical Symposium on Millimeter Waves |
Place of Publication | Piscataway, N.J. |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 19-22 |
Number of pages | 4 |
ISBN (Print) | 0780338871 |
DOIs | |
Publication status | Published - Jul 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 Topical Symposium om Millimeter Waves - Hayama, Jpn Duration: 7 Jul 1997 → 8 Jul 1997 |
Other
Other | Proceedings of the 1997 Topical Symposium om Millimeter Waves |
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City | Hayama, Jpn |
Period | 7/07/97 → 8/07/97 |