Millimetre-wave bi-directional amplifiers

John W. Archer*, Robert A. Batchelor, Oya Sevimli

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

13 Citations (Scopus)

Abstract

This paper describes a novel, bi-directional millimetre-wave amplifier, which relies upon the inherent symmetry of devices like FETs or HEMTs. The direction of amplification can be reversed by simply reversing the polarity of the DC bias applied to the active devices. Practical bi-directional amplifier designs have been implemented at 2.5, 42 and 60 GHz.

Original languageEnglish
Title of host publicationProceedings of the Topical Symposium on Millimeter Waves
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages19-22
Number of pages4
ISBN (Print)0780338871
DOIs
Publication statusPublished - Jul 1997
Externally publishedYes
EventProceedings of the 1997 Topical Symposium om Millimeter Waves - Hayama, Jpn
Duration: 7 Jul 19978 Jul 1997

Other

OtherProceedings of the 1997 Topical Symposium om Millimeter Waves
CityHayama, Jpn
Period7/07/978/07/97

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