Minority carrier diffusion lengths for high purity liquid phase epitaxial GAAS

Scott Butcher, D ALEXIEV, Trevor Tansley

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

    Original languageEnglish
    Pages (from-to)317-325
    Number of pages9
    JournalAustralian Journal of Physics
    Volume46
    Issue number2
    Publication statusPublished - 1993

    Keywords

    • SCANNING ELECTRON-MICROSCOPE

    Fingerprint

    Dive into the research topics of 'Minority carrier diffusion lengths for high purity liquid phase epitaxial GAAS'. Together they form a unique fingerprint.

    Cite this