Minority carrier diffusion lengths for high purity liquid phase epitaxial GAAS

Scott Butcher, D ALEXIEV, Trevor Tansley

Research output: Contribution to journalArticlepeer-review

Abstract

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

Original languageEnglish
Pages (from-to)317-325
Number of pages9
JournalAustralian Journal of Physics
Volume46
Issue number2
Publication statusPublished - 1993

Keywords

  • SCANNING ELECTRON-MICROSCOPE

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