MOCVD GaSb/GaAs quantum dots

Motlan, E. M. Goldys

    Research output: Contribution to journalArticlepeer-review


    We report growth of metalorganic chemical vapour deposited (MOCVD) strained GaSb three-dimensional (3D) islands on GaAs within the range of sizes consistent with quantisation effects. The structural and optical properties were examined by atomic force microscopy (AFM), scanning and transmission electron microscopes (SEM, TEM) and cathodoluminescence (CL). Long growth times up to 5 seconds were found to lead to increased dot densities, decreasing average dot sizes and narrow size distribution. These observations indicate the influence of island separation on adatom migration mediated by the evolving island-induced substrate strain fields. Considerations of incorporation/detachment kinetics are also significant for the control of the dot evolution. Room temperature cathodoluminescence spectra exhibit emission peaks shifting to higher energy with increasing growth time. These correlate with the AFM observations that show growth of smaller islands at longer growth times and are thus consistent with confinement effects.

    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    JournalMaterials Research Society Symposium - Proceedings
    Publication statusPublished - 2001


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