MOCVD GaSb/GaAs quantum dots

Motlan, E. M. Goldys

Research output: Contribution to journalArticlepeer-review

Abstract

We report growth of metalorganic chemical vapour deposited (MOCVD) strained GaSb three-dimensional (3D) islands on GaAs within the range of sizes consistent with quantisation effects. The structural and optical properties were examined by atomic force microscopy (AFM), scanning and transmission electron microscopes (SEM, TEM) and cathodoluminescence (CL). Long growth times up to 5 seconds were found to lead to increased dot densities, decreasing average dot sizes and narrow size distribution. These observations indicate the influence of island separation on adatom migration mediated by the evolving island-induced substrate strain fields. Considerations of incorporation/detachment kinetics are also significant for the control of the dot evolution. Room temperature cathodoluminescence spectra exhibit emission peaks shifting to higher energy with increasing growth time. These correlate with the AFM observations that show growth of smaller islands at longer growth times and are thus consistent with confinement effects.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume642
Publication statusPublished - 2001

Fingerprint Dive into the research topics of 'MOCVD GaSb/GaAs quantum dots'. Together they form a unique fingerprint.

Cite this