This chapter describes the modeling of terminal charges and capacitances of the device in BSIM-IMG model. The capacitive behavior of devices originates from intrinsic device capacitances and parasitic capacitances (also called extrinsic capacitances) due to the structural details of the device. Models for both intrinsic and extrinsic capacitances are described in this chapter. The capacitances are modeled as the derivatives of charges in the BSIM-IMG model. The intrinsic charge or capacitance model is naturally linked to the core model, and this chapter describes the charge modeling for both fast and extended range core models discussed in Chapter 2, Core Model for Independent Multigate MOSFETs.
|Title of host publication||Industry standard FDSOI compact model BSIM-IMG for IC design|
|Editors||Chenming Hu, Sourabh Khandelwal, Yogesh Singh Chauhan, Thomas Mckay, Josef Watts, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal|
|Place of Publication||Duxford ; Cambridge, US ; Kidlington|
|Number of pages||18|
|Publication status||Published - 2019|
|Name||Woodhead Publishing Series in Electronic and Optical Materials|