Model for terminal charges and capacitances in BSIM-IMG

Sourabh Khandelwal*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

This chapter describes the modeling of terminal charges and capacitances of the device in BSIM-IMG model. The capacitive behavior of devices originates from intrinsic device capacitances and parasitic capacitances (also called extrinsic capacitances) due to the structural details of the device. Models for both intrinsic and extrinsic capacitances are described in this chapter. The capacitances are modeled as the derivatives of charges in the BSIM-IMG model. The intrinsic charge or capacitance model is naturally linked to the core model, and this chapter describes the charge modeling for both fast and extended range core models discussed in Chapter 2, Core Model for Independent Multigate MOSFETs.
Original languageEnglish
Title of host publicationIndustry standard FDSOI compact model BSIM-IMG for IC design
EditorsChenming Hu, Sourabh Khandelwal, Yogesh Singh Chauhan, Thomas Mckay, Josef Watts, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal
Place of PublicationDuxford ; Cambridge, US ; Kidlington
PublisherElsevier
Chapter5
Pages89-106
Number of pages18
ISBN (Electronic)9780081024027
ISBN (Print)9780081024010
DOIs
Publication statusPublished - 2019

Publication series

NameWoodhead Publishing Series in Electronic and Optical Materials
PublisherElsevier

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