Modeling 20-nm Germanium FinFET with the industry standard FinFET model

Sourabh Khandelwal; Juan Pablo Duarte; Yogesh Singh Chauhan; Chenming Hu

doi:10.1109/LED.2014.2323956

Modeling 20-nm Germanium FinFET with the industry standard FinFET model

Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicular electrical field on hole mobility in germanium FinFETs is found to be different from silicon FinFETs. We present an updated Ge mobility equation to account for this difference. With this single update, BSIM-CMG agrees very well with the measured I-V data of Ge FinFETs with a gate-length from 130 to 20 nm. We conclude that a production quality standard model is available for simulation of circuits employing p-type Ge FinFET.

Original language	English
Article number	6823649
Pages (from-to)	711-713
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/LED.2014.2323956
Publication status	Published - Jul 2014
Externally published	Yes

Keywords

BSIM-CMG
compact models
FinFETs
Germanium

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10.1109/LED.2014.2323956

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title = "Modeling 20-nm Germanium FinFET with the industry standard FinFET model",

abstract = "In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicular electrical field on hole mobility in germanium FinFETs is found to be different from silicon FinFETs. We present an updated Ge mobility equation to account for this difference. With this single update, BSIM-CMG agrees very well with the measured I-V data of Ge FinFETs with a gate-length from 130 to 20 nm. We conclude that a production quality standard model is available for simulation of circuits employing p-type Ge FinFET.",

keywords = "BSIM-CMG, compact models, FinFETs, Germanium",

author = "Sourabh Khandelwal and Duarte, {Juan Pablo} and Chauhan, {Yogesh Singh} and Chenming Hu",

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AB - In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicular electrical field on hole mobility in germanium FinFETs is found to be different from silicon FinFETs. We present an updated Ge mobility equation to account for this difference. With this single update, BSIM-CMG agrees very well with the measured I-V data of Ge FinFETs with a gate-length from 130 to 20 nm. We conclude that a production quality standard model is available for simulation of circuits employing p-type Ge FinFET.

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Modeling 20-nm Germanium FinFET with the industry standard FinFET model

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Keywords

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